Characterization of leakage current in buried-oxide SOI transistors
- 1 September 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 36 (9) , 1740-1745
- https://doi.org/10.1109/16.34237
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- The characteristics of CMOS devices in oxygen-implanted silicon-on-insulator structuresIEEE Transactions on Electron Devices, 1988
- Microstructure of high-temperature annealed buried oxide silicon-on-insulatorApplied Physics Letters, 1986
- Heavy metal gettering in silicon-on-insulator structures formed by oxygen implantation into siliconJournal of Applied Physics, 1985
- Anomalous leakage current in LPCVD PolySilicon MOSFET'sIEEE Transactions on Electron Devices, 1985
- Threshold voltage of thin-film Silicon-on-insulator (SOI) MOSFET'sIEEE Transactions on Electron Devices, 1983