Heavy metal gettering in silicon-on-insulator structures formed by oxygen implantation into silicon
- 1 October 1985
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 58 (7) , 2559-2563
- https://doi.org/10.1063/1.335910
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Metal Impurities near the SiO2 ‐ Si InterfaceJournal of the Electrochemical Society, 1984
- Effects of implantation temperature on the properties of buried oxide layers in silicon formed by oxygen ion implantationApplied Physics Letters, 1984
- Increased carrier lifetimes in epitaxial silicon layers on buried silicon nitride produced by ion implantationElectronics Letters, 1984
- The Top Silicon Layer of SOI Formed by Oxygen Ion ImplantationIEEE Transactions on Nuclear Science, 1983
- Carrier lifetimes in silicon epitaxial layers deposited on oxygen-implanted substratesElectronics Letters, 1983
- Studies of Phosphorus Pile‐Up at the Si ‐ SiO2 Interface Using Auger Sputter ProfilingJournal of the Electrochemical Society, 1981