Role of oxygen atoms in the phonon conductivity of Si containing 5 ×1017oxygen atoms percm3

The reduction in the phonon conductivity of silicon crystals containing 5 × ${10}^{17}$ oxygen atoms per ${\mathrm{cm}}^3$ near the maximum is interpreted on the basis of the phonon scattering by clusters of oxygen atoms, each atom forming an isosceles triangle with two neighboring silicon atoms at its lattice site. Klemens's theory for the scattering of phonons by clusters of substitutional impurities is assumed for interstitial impurities and is used to explain the results. The scattering of phonons by clusters is negligible in the case of samples containing less than 5 × ${10}^{15}$ ${\mathrm{cm}}^{-3\mathrm{}}$ oxygen atoms.