Low-k fluorinated amorphous carbon interlayer technology for quarter micron devices
- 24 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 01631918,p. 369-372
- https://doi.org/10.1109/iedm.1996.553605
Abstract
We have developed a new interlayer technology that attains a 50% reduction in capacitance and keeps good process compatibility with current Chemical Mechanical Polishing (CMP) based multi-level metallization (MLM) processes. This technology uses fluorinated amorphous carbon (a-C:F) with a dielectric constant of 2.3, sandwiched between layers of SiO/sub 2/, which are formed sequentially by high density plasma-chemical vapor deposition (HDP-CVD). The top SiO/sub 2/ layer assures oxygen plasma resistance during via etching, metal etching, and resist removal.Keywords
This publication has 2 references indexed in Scilit:
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- Fluorinated amorphous carbon thin films grown by plasma enhanced chemical vapor deposition for low dielectric constant interlayer dielectricsJournal of Applied Physics, 1995