Gallium arsenide antimonide: The possibility of lattice-matched LPE growth on InP substrates
- 1 December 1978
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 49 (12) , 5920-5923
- https://doi.org/10.1063/1.324558
Abstract
The possibility of using liquid phase epitaxy (LPE) to grow GaAsxSb1−x on InP substrates has been investigated. Theoretical phase‐diagram calculations for the GaAsSb system show the solidus compositions in the x?0.5 region, where lattice matching to InP occurs, to be strongly dependent on temperature and in some cases multivalued, making it extremely difficult to achieve the degree of temperature control required for deposition of uniform LPE layers. When growths were attempted two‐phase deposits were consistently found, an observation which supports the above conclusions. Appreciable rapid dissolution of the InP substrates was also observed. It is concluded that successful LPE growth of GaAsSb lattice‐matched to InP is unlikely by conventional variable‐temperature LPE techniques.This publication has 4 references indexed in Scilit:
- Molecular-beam epitaxy (MBE) of In1−xGaxAs and GaSb1−yAsyApplied Physics Letters, 1977
- GaAs1-xSbx(0.3<x<0.9) Grown by Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1977
- Growth and properties of liquid-phase epitaxial GaAs1−xSbxJournal of Applied Physics, 1977
- Liquid Epitaxial Growth of GaAsSb and Its Use as a High-Efficiency, Long-Wavelength Threshold PhotoemitterJournal of Applied Physics, 1970