Improvements in resonance frequency and T0 value by 1.5 μm InGaAs MQW lasers grown by MOVPE
- 1 January 1988
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 93 (1-4) , 857-862
- https://doi.org/10.1016/0022-0248(88)90631-8
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Low internal loss separate confinement heterostructure InGaAs/InGaAsP quantum well laserApplied Physics Letters, 1987
- Room-temperature excitons in Ga0.47In0.53As-InP superlattices grown by low-pressure metalorganic chemical vapor depositionApplied Physics Letters, 1986
- Extremely high quality Ga0.47In0.53As/InP quantum wells grown by chemical beam epitaxyApplied Physics Letters, 1986
- Optical properties of very thin GaInAs(P)/InP quantum wells grown by gas source molecular beam epitaxyApplied Physics Letters, 1986
- GaInAs(P)/InP quantum well structures grown by gas source molecular beam epitaxyApplied Physics Letters, 1985
- Photoluminescence from In0.53Ga0.47As/InP quantum wells grown by molecular beam epitaxyApplied Physics Letters, 1985
- Fabrication and performance characteristics of 1.55-μm InGaAsP multiquantum well ridge guide lasersApplied Physics Letters, 1985
- Fabrication and performance characteristics of InGaAsP multiquantum well double channel planar buried heterostructure lasersApplied Physics Letters, 1985
- Recent advances in MOCVD growth of InxGa1-xAsyP1-y alloysJournal of Crystal Growth, 1984
- Growth of Ga0.47In0.53As-InP quantum wells by low pressure metalorganic chemical vapor depositionApplied Physics Letters, 1983