Positive ion species in high-density discharges containing chlorine and boron–trichloride
- 1 November 1998
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology A
- Vol. 16 (6) , 3235-3239
- https://doi.org/10.1116/1.581528
Abstract
We have used a quadrupole mass spectrometer to measure the positive ion species striking the wafer in a high-density plasma processing discharge containing chlorine and boron–trichloride. Since the relative transmission of our mass spectrometer versus ion mass is known, we are able to report the relative concentrations of the ion species striking the wafer. Our measurements were made in an inductively coupled Gaseous Electronics Conference Reference Cell operating at pressures between 15 and 50 mTorr and at electron densities up to 1011/cm3. The ion spectrum in these discharges is normally dominated by Cl+, Cl2+, BCl2+, and etch products. However, reactor wall or wafer surface conditions can strongly affect the ion species in the discharge. When a stainless steel “wafer” was replaced with a bare Si wafer, the dominant chlorine ion changed from Cl+ to Cl2+. A bare aluminum wafer strongly quenched both Cl+ and Cl2+ signals.Keywords
This publication has 19 references indexed in Scilit:
- Simulations of BCl3/Cl2/Ar plasmas with comparisons to diagnostic dataJournal of Vacuum Science & Technology A, 1998
- Dynamics of collisionless rf plasma sheathsJournal of Applied Physics, 1997
- Direct Simulation Monte Carlo of Inductively Coupled Plasma and Comparison with ExperimentsJournal of the Electrochemical Society, 1997
- Relative atomic chlorine density in inductively coupled chlorine plasmasJournal of Applied Physics, 1997
- Two-dimensional fluid model of an inductively coupled plasma with comparison to experimental spatial profilesJournal of Applied Physics, 1996
- Predictions of ion energy distributions and radical fluxes in radio frequency biased inductively coupled plasma etching reactorsJournal of Applied Physics, 1996
- Effects of atomic chlorine wall recombination: Comparison of a plasma chemistry model with experimentJournal of Vacuum Science & Technology A, 1995
- Power deposition in high-density inductively coupled plasma tools for semiconductor processingPhysics of Plasmas, 1995
- Global model of Ar, O2, Cl2, and Ar/O2 high-density plasma dischargesJournal of Vacuum Science & Technology A, 1995
- Continuum modeling of radio-frequency glow discharges. I. Theory and results for electropositive and electronegative gasesJournal of Applied Physics, 1992