Measurement of the quasi-static C-V curves of an MIS structure in the presence of charge leakage
- 1 May 1985
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 28 (5) , 447-451
- https://doi.org/10.1016/0038-1101(85)90106-6
Abstract
No abstract availableThis publication has 2 references indexed in Scilit:
- New techniques of capacitance-voltage measurements of semiconductor junctionsSolid-State Electronics, 1982
- A quasi-static technique for MOS C-V and surface state measurementsSolid-State Electronics, 1970