New techniques of capacitance-voltage measurements of semiconductor junctions
- 28 February 1982
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 25 (2) , 95-99
- https://doi.org/10.1016/0038-1101(82)90037-5
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Properties of Au, Pt, Pd and Rh levels in silicon measured with a constant capacitance techniqueSolid-State Electronics, 1974
- Determination of deep-level energy and density profiles in inhomogeneous semiconductorsApplied Physics Letters, 1973
- A feedback method for investigating carrier distributions in semiconductorsIEEE Transactions on Electron Devices, 1972
- A quasi-static technique for MOS C-V and surface state measurementsSolid-State Electronics, 1970