Second harmonic generation in orderedGa1xInxP

Abstract
Reflection second harmonic generation (SHG) has been used to measure the rotation/reflection properties of spontaneously ordered Ga1xInxP. Particular conditions are identified in which the SHG signal arises solely from the order-induced symmetry breaking of the 4¯ operation in zinc blende. By extending the usual experimental techniques to the epilayer edges, the point group of ordered Ga1xInxP was completely determined from optical methods, and the four components of the nonlinear susceptibility were measured. The case of double-variant samples is also discussed.