On the barrier height in grain boundaries of InSb bicrystals
- 16 June 1984
- journal article
- electric transport
- Published by Wiley in Physica Status Solidi (a)
- Vol. 83 (2) , K207-K210
- https://doi.org/10.1002/pssa.2210830266
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Electric subbands in P-type germanium inversion layersSolid State Communications, 1983
- Erratum - La phase en acoustique musicale. II. le rayonnement des instruments à ventJournal de Physique, 1982
- Electrical properties of grain boundaries in n-type and p-type GaPPhysica Status Solidi (a), 1981
- The dc voltage dependence of semiconductor grain-boundary resistanceJournal of Applied Physics, 1979
- Zero-bias resistance of grain boundaries in neutron-transmutation-doped polycrystalline siliconJournal of Applied Physics, 1978
- Conductance and Capacitance of 6-deg Tilt Boundaries in p-Type InSbJournal of Applied Physics, 1967