Conductance and Capacitance of 6-deg Tilt Boundaries in p-Type InSb
- 1 April 1967
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 38 (5) , 2244-2247
- https://doi.org/10.1063/1.1709862
Abstract
Conductance and capacitance measurements on α and β grain boundaries in p‐type indium antimonide are discussed. It is found that the grain boundary barrier is of the order of the band gap, which implies that an inversion layer exists at the boundary. It is further found that the predominant current transport across the boundary is minority carrier flow, in agreement with a model described in a previous publication.This publication has 8 references indexed in Scilit:
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- Capacitance and Barrier Height in Grain BoundariesJournal of Applied Physics, 1959
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