Tem Characterization of Grain Boundaries in Mazed Bicrystal Films of Aluminum

This publication has 11 references indexed in Scilit:

• Atomic structure of a Σ99 grain boundary in aluminium: A comparison between atomic-resolution observation and pair-potential and embedded-atom simulations
  Philosophical Magazine Letters, 1990
• Epitaxial growth of Al on Si by thermal evaporation in ultra-high vacuum: growth on Si(100)2 × 1 single and double domain surfaces at room temperature
  Surface Science, 1990
• Structure of ionized cluster beam aluminum deposited on (100) silicon
  Applied Physics Letters, 1989
• Quasiperiodicity in irrational interfaces
  Phase Transitions, 1989
• The use of heteroepitaxy in the fabrication of bicrystals for the study of grain boundary structure
  Scripta Metallurgica, 1988
• Color symmetry
  Computers & Mathematics with Applications, 1988
• The Variation of Grain Boundary Energy in Copper with Boundary Plane Orientation
  MRS Proceedings, 1988
• A survey of domains and domain walls generated by crystallographic phase transitions causing a change of the lattice
  Physica Status Solidi (a), 1984
• Epitaxial growth of Al on Si(111) and Si(100) by ionized-cluster beam
  Journal of Applied Physics, 1984
• Group-theoretical considerations concerning domain formation in ordered alloys
  Acta Crystallographica Section A, 1974