Seeded oscillatory growth of Si over SiO2 by cw laser irradiation
- 15 June 1982
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 40 (12) , 1043-1045
- https://doi.org/10.1063/1.92998
Abstract
Extensive seeded epitaxial growth of crystalline Si over SiO2 was achieved by an oscillatory regrowth method applied to rectangular Si pads recessed into a thick SiO2 film. Narrow (≃5 μm) via holes linked the pads with the bulk (100) Si substrate. Oriented single crystals propagated as far as 500 μm from the seeding area, following the long term advance of a scanned focused laser beam.Keywords
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