Elastic Electron Scattering in Symmetry‐Induced Zero‐Gap Semiconductors
- 1 October 1974
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 65 (2) , 641-654
- https://doi.org/10.1002/pssb.2220650223
Abstract
No abstract availableKeywords
This publication has 35 references indexed in Scilit:
- Electron Transport in Zincblende SemimetalsPhysica Status Solidi (b), 1973
- Influence of pressure on the mobility in heavily doped n‐type indium antimonidePhysica Status Solidi (b), 1971
- Effect ofIntraband Polarization on the Mobility of Zero-Gap SemiconductorsPhysical Review B, 1971
- On the deformation potential constant of the conduction band in InSbPhysica Status Solidi (b), 1971
- Evidence for a Dielectric Singularity in HgSe and HgTePhysical Review B, 1970
- Long-Wavelength Phonon Scattering in Nonpolar SemiconductorsPhysical Review B, 1969
- Ionized-Impurity-Limited Mobility and the Band Structure of Mercuric SelenidePhysical Review B, 1969
- Dielectric Singularity ofPhysical Review B, 1968
- Electron-phonon interactions at low temperatures in n-type InSbProceedings of the Physical Society, 1967
- Band Structure of HgTePhysica Status Solidi (b), 1965