Distributed feedback strained layer quantum well heterostructure 980 nm laser fabricated by two-step metalorganic chemical vapor deposition

Publisher Website
Google Scholar
Abstract
Data are presented for single longitudinal mode, strained-layer AlGaAs-GaAs-InGaAs quantum well heterostructure distributed feedback lasers emitting near 980 nm. Device fabrication consists of conventional holographic photolithography and two-step metalorganic chemical vapor deposition growth. Regrowth over a GaAs grating layer and GaAs solid phase mass transport are discussed. The lasers are single mode up to twice Ith, have differential quantum efficiencies of 50%, and have threshold current densities of 600 A/cm2.