A Field Effect Transitor based on the Mott Transition in a Molecular Layer

Preprint

21 June 1996

preprint
Published by arXiv in arXiv

https://doi.org/10.48550/arXiv.cond-mat/9606157

Abstract

Here we propose and analyze the behavior of a FET--like switching device, the Mott transition field effect transistor, operating on a novel principle, the Mott metal--insulator transition. The device has FET-like characteristics with a low ``ON'' impedance and high ``OFF'' impedance. Function of the device is feasible down to nanoscale dimensions. Implementation with a class of organic charge transfer complexes is proposed.

Keywords

FIELD EFFECT TRANSISTOR
EFFECT TRANSITOR
TRANSITOR BASED
MOTT TRANSITION
TRANSISTOR
NANOSCALE
FET

All Related Versions

Version 1, 1996-06-21, ArXiv
Published version: Applied Physics Letters, 70 (5), 598.

This publication has 0 references indexed in Scilit: