A field effect transistor based on the Mott transition in a molecular layer
- 3 February 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 70 (5) , 598-600
- https://doi.org/10.1063/1.118285
Abstract
Here we propose and analyze the behavior of a field effect transistor (FET)-like switching device, the Mott transition field effect transistor, operating on a novel principle, the Mott metal-insulator transition. The device has FET-like characteristics with a low “ON” impedance and high “OFF” impedance. Function of the device is feasible down to nanoscale dimensions. Implementation with a class of organic charge transfer complexes is proposed.Keywords
All Related Versions
This publication has 8 references indexed in Scilit:
- Organic Heterostructure Field-Effect TransistorsScience, 1995
- CMOS scaling into the 21st century: 0.1 µm and beyondIBM Journal of Research and Development, 1995
- All-Polymer Field-Effect Transistor Realized by Printing TechniquesScience, 1994
- Metal-insulator transition and antiferromagnetic order in bis(ethylenedithio)tetrathiafulvalene tetracyanoquinodimethane (BEDT-TTF)(TCNQ)Physical Review B, 1994
- Systematic deviation from T-linear behavior in the in-plane resistivity of : Evidence for dominant spin scatteringPhysical Review Letters, 1993
- When are thin films of metals metallic?Progress in Surface Science, 1993
- Correlated discrete transfer of single electrons in ultrasmall tunnel junctionsIBM Journal of Research and Development, 1988
- The difference between metallic and insulating salts of tetracyanoquinodimethone (TCNQ): how to design an organic metalAccounts of Chemical Research, 1979