Fast charge collection in GaAs MESFETs
Open Access
- 1 December 1990
- journal article
- research article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 37 (6) , 1902-1908
- https://doi.org/10.1109/23.101207
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- Ion induced charge collection in GaAs MESFETsIEEE Transactions on Nuclear Science, 1989
- Practical approach to ion track energy distributionJournal of Applied Physics, 1988
- Laser Simulation of Single Event UpsetsIEEE Transactions on Nuclear Science, 1987
- Charge Collection Efficiency Related to Damage in MOS CapaciorsIEEE Transactions on Nuclear Science, 1987
- Charge Collection in Ga/Aa Test StructuresIEEE Transactions on Nuclear Science, 1984
- Degradation in GaAs FETs Resulting from Alpha Particle IrradiationIEEE Transactions on Nuclear Science, 1984
- Characterization of electron traps in ion-implanted GaAs MESFET's on undoped and Cr-doped LEC semi-insulating substratesIEEE Transactions on Electron Devices, 1983
- Picosecond photoconductivity in radiation-damaged silicon-on-sapphire filmsApplied Physics Letters, 1981
- Use of an Ion Microbeam to Study Single Event Upsets in MicrocircuitsIEEE Transactions on Nuclear Science, 1981
- Electron traps in bulk and epitaxial GaAs crystalsElectronics Letters, 1977