Dynamics of Electrons in Heavily Doped GaAs
- 1 January 1974
- conference paper
- Published by Springer Nature
- p. 1104-1108
- https://doi.org/10.1007/978-3-322-94774-1_191
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Effect of saturable absorption on the behavior of spontaneous emission in semiconductor lasersApplied Physics Letters, 1973
- Variation of spontaneous emission with current in GaAs homostructure and double-heterostructure injection lasersIEEE Journal of Quantum Electronics, 1973
- Behavior of spontaneous emission across threshold in GaAs junction lasersApplied Physics Letters, 1972
- Reduction in the rate of increase of spontaneous emission from double-heterostructure injection lasers at thresholdApplied Physics Letters, 1972
- Spectral Output of Semiconductor LasersJournal of Applied Physics, 1964