Schottky-barrier heights of transition-metal-silicide–silicon contacts studied by x-ray photoelectron spectroscopy measurements

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Abstract
Core-level energy shifts and chemical shifts of transition metals on silicide formations are measured by use of x-ray photoelectron spectroscopy for 10 different silicides. The linear correlation is found between the chemical shifts and silicide–n-type Si Schottky-barrier heights. This correlation shows that Schottky-barrier heights are proportional to the energy shifts of valence d bands of transition metals on silicide formations. Roles of chemical bonds in Schottky-barrier heights are discussed.