Dependence of Gate Oxide Breakdown Frequency on Ion Current Density Distributions during Electron Cyclotron Resonance Plasma Etching
- 1 November 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (11A) , L1902
- https://doi.org/10.1143/jjap.30.l1902
Abstract
According to the reduction of gate oxide thickness in Metal-Oxide-Semiconductor (MOS) devices, the gate oxide degradation caused by the stored charge during magnetized high-density plasma etching becomes a serious problem. The gate oxide degradation and the breakdown are brought about due to the nonuniform plasma radiation by the uneven magnetic field profile. Therefore, the flat equi-magnetic field profile suppresses the gate oxide degradation during electron cyclotron resonance (ECR) plasma etching.Keywords
This publication has 1 reference indexed in Scilit:
- Damage Caused by Stored Charge during ECR Plasma EtchingJapanese Journal of Applied Physics, 1990