Growth of Smooth Uniform Epitaxial Layers by Liquid-Phase-Epitaxial Method
- 1 April 1972
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 43 (4) , 1394-1396
- https://doi.org/10.1063/1.1661330
Abstract
The liquid‐phase‐epitaxial (LPE) process has proven to be a very effective technique for the formation of high‐quality III‐V semiconductor layers. It has found widespread use because devices made by this method produce high‐efficiency LED's and low‐threshold lasers. A limitation of this method has been the difficulty of making smooth high‐quality surfaces. It will be shown that the use of a specially designed LPE growth apparatus makes possible the growth of reproducible uniform economical and, above all, smooth photolithographic processable layers. This process has made possible the formation of planar monolithic AlxGa1−xAs LED's with luminance characteristics as high as 104 ft L at a current density of ∼40 A/cm2.This publication has 5 references indexed in Scilit:
- Infrared illuminators of gallium arsenide with high efficiencyInfrared Physics, 1970
- DOUBLE-HETEROSTRUCTURE INJECTION LASERS WITH ROOM-TEMPERATURE THRESHOLDS AS LOW AS 2300 A/cm2Applied Physics Letters, 1970
- Control of Optical Losses in p-n Junction Lasers by Use of a Heterojunction: Theory and ExperimentJournal of Applied Physics, 1970
- GaP RED ELECTROLUMINESCENT DIODES WITH AN EXTERNAL QUANTUM EFFICIENCY OF 7%Applied Physics Letters, 1969
- EFFICIENT VISIBLE ELECTROLUMINESCENCE AT 300°K FROM Ga1-xAlxAs p-n JUNCTIONS GROWN BY LIQUID-PHASE EPITAXYApplied Physics Letters, 1967