Gallium Arsenide (GaAs)
- 1 January 1985
- book chapter
- Published by Elsevier
Abstract
No abstract availableThis publication has 15 references indexed in Scilit:
- A new resonant ellipsometric technique for characterizing the interface between GaAs and its plasma-grown oxideJournal of Applied Physics, 1978
- Infrared reflectance studies of bulk and epitaxial-film n-type GaAsJournal of Applied Physics, 1977
- Effects of mechanical polishing damage on the ir reflectance and attenuated total reflection spectra of n-type GaAsJournal of Vacuum Science and Technology, 1976
- Temperature dependence of far-infrared absorption in GaAsPhysical Review B, 1975
- Concentration dependence of the absorption coefficient for n− and p−type GaAs between 1.3 and 1.6 eVJournal of Applied Physics, 1975
- Investigation of infrared loss mechanisms in high-resistivity GaAsJournal of Applied Physics, 1974
- Infrared reflection of ion-implanted GaAsJournal of Applied Physics, 1974
- Far Infrared Measurement of the Dielectric Properties of GaAs and CdTe at 300 K and 8 KApplied Optics, 1969
- Optical Properties of SemiconductorsPhysical Review B, 1963
- Lattice Absorption in Gallium ArsenideJournal of Applied Physics, 1961