Switching effect based on the N-shaped negative differential resistance in n-CdCr2Se4 single crystals
- 16 December 1983
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 80 (2) , K149-K151
- https://doi.org/10.1002/pssa.2210800245
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Negative differential resistances in ferromagnetic semiconductor CdCr2Se4 single crystalsPhysica Status Solidi (a), 1983
- Effect of annealing on the electrical conductivity of in-doped CdCr2Se4 single crystalsPhysica Status Solidi (a), 1979
- The Effect of the Degree of Doping on Magneto-Electrical Properties of n-CdCr2Se4 MonocrystalsPhysica Status Solidi (b), 1978
- Negative resistances in n-type CdCr2Se4 single crystalsApplied Physics Letters, 1977
- Threshold and Memory Switching in Single Crystals of the Magnetic Semiconductor CdCr2Se4Physica Status Solidi (a), 1977