Electrical Characterization of Defects in GaAs Grown on Si by MBE
- 1 January 1987
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Passivation of Si donors and D X centers in AlGaAs by hydrogen plasma exposureApplied Physics Letters, 1987
- Defect reduction by thermal annealing of GaAs layers grown by molecular beam epitaxy on Si substratesApplied Physics Letters, 1987
- Significant improvement in crystalline quality of molecular beam epitaxially grown GaAs on Si (100) by rapid thermal annealingApplied Physics Letters, 1986
- Schottky-barrier height of ideal metal contacts to GaAsApplied Physics Letters, 1984
- Metal-semiconductor contactsIEE Proceedings I Solid State and Electron Devices, 1982
- Study of electron traps in n-GaAs grown by molecular beam epitaxyJournal of Applied Physics, 1976
- Deep-level transient spectroscopy: A new method to characterize traps in semiconductorsJournal of Applied Physics, 1974
- Physics of Semiconductor DevicesPhysics Today, 1970
- Dislocations in CrystalsPhysics Today, 1955