Empirical Characterization of Low-Temperature Magnetoresistance Effects in Heavily Doped Ge and Si
- 1 October 1963
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 11 (7) , 328-331
- https://doi.org/10.1103/physrevlett.11.328
Abstract
DOI: https://doi.org/10.1103/PhysRevLett.11.328Keywords
This publication has 5 references indexed in Scilit:
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- Magnetoresistance in Germanium in the Impurity Conduction RangePhysical Review B, 1962
- Magnetoresistance in Heavily Doped n-Type GermaniumJournal of the Physics Society Japan, 1962
- Transport Properties of a Many-Valley SemiconductorBell System Technical Journal, 1955
- Electrical Properties of-Type GermaniumPhysical Review B, 1954