Electron paramagnetic resonance study of porous silicon
- 27 April 1992
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (17) , 2116-2117
- https://doi.org/10.1063/1.107107
Abstract
Electron paramagnetic resonance studies under ambient conditions of boron‐doped porous silicon show anisotropic Zeeman (g) and hyperfine (A) tensors, signaling localization of the charge carriers due to quantum confinement.Keywords
This publication has 7 references indexed in Scilit:
- Evidence for quantum confinement in the photoluminescence of porous Si and SiGeApplied Physics Letters, 1991
- Visible light emission due to quantum size effects in highly porous crystalline siliconNature, 1991
- Porous silicon formation: A quantum wire effectApplied Physics Letters, 1991
- Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafersApplied Physics Letters, 1990
- Localized states in doped amorphous siliconJournal of Non-Crystalline Solids, 1985
- Defects in irradiated silicon: EPR and electron-nuclear double resonance of interstitial boronPhysical Review B, 1975
- Paramagnetic Resonance Absorption from Acceptors in SiliconPhysical Review Letters, 1960