H3PO4 — etching of {001}‐faces of InP, (GaIn)P, GaP, and Ga(AsP)
- 1 January 1979
- journal article
- research article
- Published by Wiley in Crystal Research and Technology
- Vol. 14 (5) , 563-569
- https://doi.org/10.1002/crat.19790140509
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
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- On the method and results of a dislocation structure analysis of Ga(As, P) by etchingPhysica Status Solidi (a), 1975
- Ätzuntersuchungen an VerneuilspinellenCrystal Research and Technology, 1972
- Etching Studies of Impurity Precipitates in Pulled GaP CrystalsJournal of the Electrochemical Society, 1971
- Etch pits in flux-grown corundumJournal of Materials Science, 1967
- Etching of Dislocations on the Low-Index Faces of GaAsJournal of Applied Physics, 1965