Domain Wall Pinning in Narrow Ferromagnetic Ring Structures Probed by Magnetoresistance Measurements
- 3 March 2003
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 90 (9) , 097202
- https://doi.org/10.1103/physrevlett.90.097202
Abstract
We present a magnetoresistance study of magnetization reversal and domain wall pinning effects in a mesoscopic narrow ferromagnetic Permalloy ring structure containing notches. The size and strength of the attractive pinning potential created by a notch is measured and the resistance minimum at remanence is found to occur when a single transverse domain wall is pinned at the notch, in agreement with the results of numerical simulations of the anisotropic magnetoresistance. When a field is applied in the direction corresponding to a potential well edge, a novel magnetic state with a very wide domain wall is stabilized, giving rise to a characteristic signature in the magnetoresistance at such angles.Keywords
This publication has 17 references indexed in Scilit:
- Ballistic magnetoresistance in a magnetic nanometer sized contact: An effective gate for spintronicsApplied Physics Letters, 2001
- Precessional switching in narrow ring nanomagnetsPhysica B: Condensed Matter, 2001
- Magnetization reversal and electric transport in ferromagnetic nanowiresMaterials Science and Engineering: B, 2001
- Domain wall traps for low-field switching of submicron elementsJournal of Applied Physics, 2000
- Geometrically Constrained Magnetic WallPhysical Review Letters, 1999
- Domain Wall Scattering Explains 300% Ballistic Magnetoconductance of NanocontactsPhysical Review Letters, 1999
- Magnetoresistance in excess ofin Ballistic Ni Nanocontacts at Room Temperature and 100 OePhysical Review Letters, 1999
- Resistivity due to a Domain Wall in Ferromagnetic MetalPhysical Review Letters, 1997
- Head to head domain wall structures in thin magnetic stripsIEEE Transactions on Magnetics, 1997
- Quantum dynamics and tunneling of domain walls in ferromagnetic insulatorsPhysical Review Letters, 1991