Process integration induced thermodesorption from SiO2/SiLK resin dielectric based interconnects
- 1 September 1999
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 17 (5) , 2136-2146
- https://doi.org/10.1116/1.590883
Abstract
The thermodesorption from SiO2/SiLK resin dielectric assemblies at various stages of interconnect fabrication are studied by mass spectrometry. Species desorption from such an assembly is governed by the intrinsic material properties and the process step history, such as patterning chemistry and by environmental contamination. The thermodesorption of an as-cured SiLK resin film is compared to the desorption of species after different process steps. It is shown that as cured SiLK films contain very low amounts of moisture and volatile organic compounds. The plasma-enhanced chemical vapor deposition SiO2 hardmask is the main source of moisture in the SiO2/SiLK resin dielectric stack. Annealing at T⩾350 °C in both vacuum and nitrogen ambient conditions drastically reduces the species desorption. The origin and the kinetics of the desorbed species are described.Keywords
This publication has 5 references indexed in Scilit:
- Effects of oxygen and fluorine on the dry etch characteristics of organic low-k dielectricsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1999
- ResourcesMRS Bulletin, 1997
- Silk Polymer Coating with Low Dielectric Constant and High Thermal Stability for Ulsi Interlayer DielectricMRS Proceedings, 1997
- Tightly bound H2O in spin-on-glassJournal of Vacuum Science & Technology B, 1990
- A trace gas mass spectrometer for on‐line monitoring of sputter processes at 10−2 mbar without pressure reductionJournal of Vacuum Science & Technology A, 1990