Thick oxidized porous silicon layer as thermo-insulating material for high temperature operating thin and thick film gas sensors
- 22 November 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 1, 213-216
- https://doi.org/10.1109/sensor.1997.613621
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- The Formation, Morphology, and Optical Properties of Porous Silicon StructuresJournal of the Electrochemical Society, 1992
- Porous silicon as a material in microsensor technologySensors and Actuators A: Physical, 1992
- A substrate for thin-film gas sensors in microelectronic technologySensors and Actuators B: Chemical, 1990
- Porous silicon: The material and its applications to SOI technologiesMicroelectronic Engineering, 1988
- Monolithic pressure-flow sensorIEEE Transactions on Electron Devices, 1987
- The kinetics and mechanism of oxide layer formation from porous silicon formed on p-Si substratesJournal of Applied Physics, 1987