Hydrogen influence on the optoelectronic properties of triode dc sputtered amorphous silicon: Disorder effects on deep gap states characteristics
- 1 December 1985
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 77-78, 319-322
- https://doi.org/10.1016/0022-3093(85)90665-9
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Admittance frequency dependence of Schottky barriers formed on dc triode sputtered amorphous silicon: Hydrogen influence on deep gap state characteristicsJournal of Applied Physics, 1985
- Disorder effects on deep trapping in amorphous semiconductorsPhilosophical Magazine Part B, 1984
- Disorder and the Optical-Absorption Edge of Hydrogenated Amorphous SiliconPhysical Review Letters, 1981
- Effect of hydrogen on the density of gap states in reactively sputtered amorphous siliconPhysical Review B, 1981
- Far-infrared absorption of pure and hydrogenated-Ge and-SiPhysical Review B, 1980
- A new approach to the interpretation of transport results in a-SiPhilosophical Magazine Part B, 1980
- Chemical effects on the frequencies of Si-H vibrations in amorphous solidsSolid State Communications, 1979
- Nonradiative capture and recombination by multiphonon emission in GaAs and GaPPhysical Review B, 1977
- Effects of the local configuration on the lattice dynamics of group-IV semiconductorsPhysical Review B, 1976