High-power, reliable operation of 730 nm AlGaAs laser diodes

High-power operation of AlGaAs multi-quantum-well laser diodes emitting near 730 nm is reported. 1000 h, reliable operation at a power of 1.0 W for 100 μm emission aperture and 500 μm cavity length devices has been demonstrated at room temperature. These devices have threshold current densities of 770 A/cm² with the characteristic temperature coefficients of threshold current, $T_0,$ and external differential quantum efficiency, $T_1,$ of 152 and 167 K, respectively.