High-power InAlGaAs-GaAs laser diode emitting near 731 nm

1 November 1997

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters

Vol. 9 (11) , 1451-1453
https://doi.org/10.1109/68.634705

Abstract

High-power, reliable operation of an InAlGaAs-based QW laser diode structure emitting near 731 nm and having a strained InAlGaAs active region is described. Threshold currents for coated 100 /spl mu/m/spl times/1000 /spl mu/m devices are 281 mA, and a peak power conversion efficiency of 41% is measured. Internal losses are measured to be 1.2 cm/sup -1/. A system for fiber-coupling two-dimensional continuous-wave (CW) arrays of these devices is demonstrated.

Keywords

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