High-power, high-temperature operation of AlInGaAs-AlGaAs strained single-quantum-well diode lasers
- 1 October 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 3 (10) , 857-859
- https://doi.org/10.1109/68.93240
Abstract
Strained layer AlInGaAs-AlGaAs graded-index separate-confinement heterostructure single-quantum-well diode lasers with cavity width and length of 500 and 1000 mu m, respectively, have been operated continuous-wave (CW) at heatsink temperatures up to 125 degrees C, with output power up to 4.9 W per facet and power efficiency as high as 49% measured at 10 degrees C. Promising results have been obtained in initial reliability tests on uncoated devices at heatsink temperatures of 10 and 50 degrees C.<>Keywords
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