High-temperature operation (to 180 °C) of 0.98 μm strained single quantum well In0.2Ga0.8As/GaAs lasers
- 1 April 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (13) , 1437-1439
- https://doi.org/10.1063/1.105191
Abstract
Graded refractive index In0.2Ga0.8As/GaAs strained single quantum well ridge lasers, emitting at 0.98 μm, have been grown by molecular beam epitaxy. For pulsed excitation, laser operation has been obtained up to 180 °C for 1016‐μm‐long lasers. This record high operating temperature results from a high T0=160 °C characteristic of these long lasers. Anomalous threshold current dependences on temperature are found for shorter lasers and are attributed to band filling at high current densities and a shift of the emission from the n=1 quantum level to the n=2 level.Keywords
This publication has 13 references indexed in Scilit:
- InGaAs/AlGaAs strained single quantum well diode lasers with extremely low threshold current density and high efficiencyApplied Physics Letters, 1990
- High-power operation of highly reliable narrow stripe pseudomorphic single quantum well lasers emitting at 980 nmIEEE Photonics Technology Letters, 1990
- A 970 nm strained-layer InGaAs/GaAlAs quantum well laser for pumping an erbium-doped optical fiber amplifierApplied Physics Letters, 1990
- Optical architecture and interface lightguide unit for fiber-to-the-home feature of the AT&T SLC Series 5 carrier systemJournal of Lightwave Technology, 1989
- Submilliampere threshold current pseudomorphic InGaAs/AlGaAs buried-heterostructure quantum well lasers grown by molecular beam epitaxyApplied Physics Letters, 1989
- Efficient pump wavelengths of erbium-doped fibre optical amplifierElectronics Letters, 1989
- Temperature-dependent factors contributing to T0 in graded-index separate-confinement-heterostructure single quantum well lasersApplied Physics Letters, 1987
- Anomalous temperature dependence of threshold for thin quantum well AlGaAs diode lasersApplied Physics Letters, 1986
- Temperature dependence of threshold current of GaAs quantum well lasersElectronics Letters, 1982
- Room-temperature threshold-current dependence of GaAs-AlxGa1−xAs double-heterostructure lasers on x and active-layer thicknessJournal of Applied Physics, 1978