Electroluminescence efficiency profiles of Mn in ZnS ac thin-film electroluminescence devices
- 15 April 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 34 (8) , 525-527
- https://doi.org/10.1063/1.90851
Abstract
We report a direct measurement of relative Mn electroluminescence (EL) efficiency in an ac EL device as a function of position normal to the ZnS film plane. The Mn EL efficiency decreases strongly with distance from the cathodic to anodic region of the ZnS layer. The cathodic‐to‐anodic efficiency ratio is about two orders of magnitude. In addition, the first ∼0.2 μm of ZnS deposited exhibits a significantly lower Mn EL efficiency relative to the remaining ZnS.Keywords
This publication has 4 references indexed in Scilit:
- Physical mechanism of current conduction and light emission in high-resistivity ZnS:Mn thin filmsPhysica Status Solidi (a), 1977
- The memory effect of ZnS : Mn ac thin-film electroluminescenceApplied Physics Letters, 1977
- Evidence for the direct impact excitation of Mn centers in electroluminescent ZnS:Mn filmsJournal of Applied Physics, 1976
- A Theory of Sensitized Luminescence in SolidsThe Journal of Chemical Physics, 1953