Growth of highly oriented TiO2 thin films on InP(100) substrates by metalorganic chemical vapor deposition
- 1 January 1997
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 170 (1-4) , 803-807
- https://doi.org/10.1016/s0022-0248(96)00573-8
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Titanium dioxide photocatalysts produced by reactive magnetron sputteringApplied Physics Letters, 1995
- Plasma enhanced chemical vapor deposition of TiO2 in microwave-radio frequency hybrid plasma reactorJournal of Vacuum Science & Technology A, 1995
- Hydrothermal epitaxy of highly oriented TiO2 thin films on siliconApplied Physics Letters, 1995
- Metalorganic chemical vapor deposition of TiO2:N anatase thin film on Si substrateApplied Physics Letters, 1995
- Optical and electrical properties of titanium dioxide films with a high magnitude dielectric constant grown on p-Si by metalorganic chemical vapor deposition at low temperatureApplied Physics Letters, 1994
- Electrochemical sulfur passivation of GaAsApplied Physics Letters, 1992
- dc reactive magnetron sputtering of titanium-structural and optical characterization of TiO2 filmsJournal of Applied Physics, 1992
- Electronic Properties of the Interface between Si and TiO2 Deposited at Very Low TemperaturesJapanese Journal of Applied Physics, 1986
- Physical and chemical aspects in the application of thin films on optical elementsApplied Optics, 1984
- C-V characteristics of metal-titanium dioxide-silicon capacitorsSolid-State Electronics, 1978