Constant Voltage Trimming of Heavily Doped Polysilicon Resistors
- 1 January 1995
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 34 (1R)
- https://doi.org/10.1143/jjap.34.48
Abstract
Constant voltage trimming (CVT) characteristics of heavily doped polysilicon resistors are analyzed using the melting-segregation model which has already been proposed to explain the mechanism of constant current trimming (CCT). The stability of CVT is found to be ensured by the exsistence of grain resistance in polysilicon which plays no role in CCT. The theoretical expression for CVT characteristics derived from the melting-segregation model, modified by the temperature dependence of grain resistance, agrees well with experimental data.Keywords
This publication has 3 references indexed in Scilit:
- A monolithic 14 bit D/A converter fabricated with a new trimming technique (DOT)IEEE Journal of Solid-State Circuits, 1984
- A physical mechanism of current-induced resistance decrease in heavily doped polysilicon resistorsIEEE Transactions on Electron Devices, 1982
- Electrical trimming of heavily doped polycrystalline silicon resistorsIEEE Transactions on Electron Devices, 1979