Distribution of damage clusters in ion-implanted silicon
- 1 August 1993
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 8 (8) , 1496-1500
- https://doi.org/10.1088/0268-1242/8/8/002
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Two-dimensional modeling of ion implantation induced point defectsIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1988
- Transient enhanced diffusion during rapid thermal annealing of boron implanted siliconApplied Physics Letters, 1985
- Diffusion of phosphorus during rapid thermal annealing of ion-implanted siliconApplied Physics Letters, 1984
- Reordering of amorphous layers of Si implanted with 31P, 75As, and 11B ionsJournal of Applied Physics, 1977