Transient enhanced diffusion during rapid thermal annealing of boron implanted silicon

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Abstract
Enhanced diffusion of ion implantedboron in silicon during the first few seconds (transient) of rapid thermal annealing (RTA) has previously tentatively been attributed to either interstitial borondiffusion or damage enhanced diffusion. We have performed various anneal sequences of 1 1B implanted Si combined with post‐implantation of 1 0B and measured the boron concentration profiles with secondary ion mass spectroscopy. The data show that the enhanced diffusion found in the tail of the profiles after RTA is not caused by fast diffusion of boron ending up at interstitial sites after the slowing down during implantation. Rather the enhanced diffusion in the tail is associated with the implantation damage annealing.