Necessity for self-diffusion in semiconductors to occur through a vacancy mechanism
- 15 April 1984
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 29 (8) , 4789-4790
- https://doi.org/10.1103/physrevb.29.4789
Abstract
Using the facts that boron diffusion can take place well below 1400 K and that interstitial boron recovers a substitutional position only around 1400 K, we deduce that substitutional impurity diffusion cannot occur through an interstitial mechanism. If so, substitutional impurity as well as self-diffusion, having similar associated activation energies, occur through a vacancy mechanism.Keywords
This publication has 5 references indexed in Scilit:
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