Current Oscillation Related to N=3 Subband Levels up to Room Temperature in InGaAs/InAlAs MQW Diodes
- 1 October 1987
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 26 (10A) , L1603
- https://doi.org/10.1143/jjap.26.l1603
Abstract
A clear current oscillation related to the n=3 subband levels was observed up to room-temperature in the forward I-V characteristic of the InGaAs/InAlAs MQW diodes, as well as a current oscillation related to the n=2 subband levels. A significant hysteresis characteristic was also observed for the current oscillation related to the n=3 subband levels at 77 K. The energy difference between the n=1 and n=2 subband levels estimated from the I-V characteristic agrees with that obtained from the absorption spectrum.Keywords
This publication has 8 references indexed in Scilit:
- Optically bistable operation in InGaAs/lnAIAs MOW laser diodes using resonant tunnelling effectElectronics Letters, 1987
- Multiple quantum well 10 μm GaAs/AlxGa1−xAs infrared detector with improved responsivityApplied Physics Letters, 1987
- Observation of intrinsic bistability in resonant tunneling structuresPhysical Review Letters, 1987
- Periodic negative conductance by sequential resonant tunneling through an expanding high-field superlattice domainPhysical Review B, 1987
- Observation of Room Temperature Current Oscillation in InGaAs/InAlAs MQW Pin DiodesJapanese Journal of Applied Physics, 1986
- Resonant tunneling through double barriers, perpendicular quantum transport phenomena in superlattices, and their device applicationsIEEE Journal of Quantum Electronics, 1986
- New Quantum Photoconductivity and Large Photocurrent Gain by Effective-Mass Filtering in a Forward-Biased SuperlatticeJunctionPhysical Review Letters, 1985
- New Transport Phenomenon in a Semiconductor "Superlattice"Physical Review Letters, 1974