Cubic InN inclusions: Proposed explanation for the small pressure-shift anomaly of the luminescence in InGaN-based quantum wells
- 30 June 1998
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 106 (9) , 567-571
- https://doi.org/10.1016/s0038-1098(98)00123-9
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
- Influence of pressure on photoluminescence and electroluminescence in GaN/InGaN/AlGaN quantum wellsApplied Physics Letters, 1997
- Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nmApplied Physics Letters, 1997
- Spontaneous emission of localized excitons in InGaN single and multiquantum well structuresApplied Physics Letters, 1996
- Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting DiodesJapanese Journal of Applied Physics, 1995
- High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well StructuresJapanese Journal of Applied Physics, 1995
- High dislocation densities in high efficiency GaN-based light-emitting diodesApplied Physics Letters, 1995
- High pressure study of Γ-X mixing in InAs/GaAs quantum dotsJournal of Physics and Chemistry of Solids, 1995
- Optical and structural properties of III-V nitrides under pressurePhysical Review B, 1994
- Epitaxial growth of cubic and hexagonal GaN on GaAs by gas-source molecular-beam epitaxyApplied Physics Letters, 1991
- Linear methods in band theoryPhysical Review B, 1975