High pressure study of Γ-X mixing in InAs/GaAs quantum dots
- 1 March 1995
- journal article
- Published by Elsevier in Journal of Physics and Chemistry of Solids
- Vol. 56 (3-4) , 385-388
- https://doi.org/10.1016/0022-3697(94)00267-3
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- InAs monolayers and quantum dots in a crystalline GaAs matrixSemiconductor Science and Technology, 1993
- Evidence for superradiant decay of excitons in InAs quantum sheetsPhysical Review B, 1992
- InAs quantum dots in a single-crystal GaAs matrixPhysical Review B, 1991
- Electronic structure of GaAs/AlAs symmetric superlattices: A high-pressure study near the type-I–type-II crossoverPhysical Review B, 1990
- Theory of electronic structure in superlatticesJournal of Luminescence, 1989
- Type-I–type-II transition of GaAs/AlAs short-period superlattices investigated by photoluminescence spectroscopy under hydrostatic pressurePhysical Review B, 1989
- Indirect-direct anticrossing in GaAs-AlAs superlattices induced by an electric field: Evidence of Γ-X mixingPhysical Review Letters, 1988
- Effects of alloying and hydrostatic pressure on electronic and optical properties of GaAs-Al_{x}Ga_{1-x}As superlattices and multiple-quantum-well structuresPhysical Review B, 1987
- Pressure dependence of GaAs/AlxGa1−xAs quantum-well bound states: The determination of valence-band offsetsJournal of Vacuum Science & Technology B, 1986
- Ultrahigh pressure diamond-anvil cell and several semiconductor phase transition pressures in relation to the fixed point pressure scaleReview of Scientific Instruments, 1975