Electrical Properties of High-Resistivity Nickel-Doped Silicon

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Abstract
Detailed galvanomagnetic measurements on high‐purity, high‐resistivity nickel‐doped silicon confirm the existence of two acceptor levels lying 0.24±0.01 and 0.37±0.01 eV from the valence and conduction bands, respectively. The electron and hole mobilities are generally in good agreement from sample to sample. Hall mobilities have temperature variations of T−2.2 for electrons and T−3.2 for holes. The conductivity mobilities, obtained in regions of constant carrier concentration, are 1300(T/300)−2.2 for electrons and 500(T/300)−2.7 for holes. A significant degree of compensation was produced when nickel was diffused into both n‐ and p‐type material at elevated temperatures.

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