Radiative and nonradiative recombination of bound excitons in GaP:N. I. Temperature behavior of zero-phonon line and phonon sidebands of bound excitons

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Abstract
The temperature behavior of zero-phonon lines and phonon sidebands of bound excitons is carefully studied. In the very-low-temperature range, the internal transition between exciton A and B causes a decrease in the luminescence intensity of zero-phonon lines with decreasing temperature. In different temperature ranges, the different activation energies indicate that the thermal quenching of bound excitons consists of three mechanisms: the ionization of the free exciton, the escape of the hole, and the debinding of the whole bound exciton. We also develop a model for the components of phonon sidebands to explain the fact that the thermal quenching of the phonon sidebands does not have the same temperature behavior as the corresponding zero-phonon lines.