Impurity Effects in the Raman and Luminescence Spectra of Nitrogen‐Doped GaP

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Abstract
Gallium phosphide doped with up to 1019 cm−3 nitrogen atoms, is used to show impurity induced effects in both, Raman and luminescence spectra. A simple way to distinguish between Raman and luminescence is given, which incidently allows to observe an intermediate behavior for some peaks. The results can be split into two different classes: the ones which are dependent on the nature of the impurity, like trapped exciton lines in the luminescence spectrum or localized Raman modes, and the ones which are independent from the nature of the impurity, like disorder activated first‐order Raman scattering (DAFORS). The Raman results are obtained under resonant conditions.