Resonant Raman scattering on the NN3level of GaP:N

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Abstract
By tuning the excitation energy through the exciton bound to a NN3 pair ground-state energy, in GaP:N at 5K, the resonant Raman behaviour for the bulk LO mode of the crystal is obtained. Because the electronic levels associated with nitrogen in GaP are highly localised, a simple expression for the Raman cross section can be derived from the general Loudon expression. A calculation of the cross section is made, which involves three sublevels of the NN3 electronic states and then compared with the experimental results. This experiment shows interference between the three Raman contributions.